Prof. Lan is Distinguished Professor in Chemical Engineering at National Taiwan University (NTU) and Founder and Honorary Chairman of Taiwan Photovoltaic Industry Association (TPVIA). He received his Ph.D. in Materials Science from the University of Wisconsin at Madison in 1991. From 2007 to 2010, he was General Director of Photovoltaics Technology Center at Industrial Technology Research Center (ITRI), Chairman of TPVIA, and Vice Chairman of Photovoltaic Committee of SEMI Taiwan. He has consulted with a few companies including AUO, Sino-American Silicon Products (SAS), Solartech Energy, Sunshine PV, TGE Polysilicon, etc. for silicon materials and solar cells. He received a few national awards including the Outstanding Research Award form National Science Council, the Distinguished Engineering Professor Award from the Chinese Institute of Engineers, the Jin Kaiying Award from the Taiwan Institute of Chemical Engineers, and the Special Contribution Award from SAS in recognizing his contribution to the industry in the advanced crystal growth technology for silicon and oxides. His research interests include crystal growth, photovoltaic materials, transport phenomena, and computer modeling. He has published more than 170 scientific papers and held more than 70 patents. He is a committee member for a few international conferences and workshops in the fields of photovoltaics and crystal growth. He is also Associate Editor of the Journal of Crystal Growth. In 2011, he developed the crystal growth technology of the so-called high-performance multi-crystalline silicon. This technology, based on the uniform nucleation of small grains, has become the main stream of silicon photovoltaics. Nowadays, near 40 GWs of solar panels installed every year are using this material. In view of his significant contribution on crystal growth, the International Organization for Crystal Growth (IOCG) awarded him the 2016 Laudise Prize, which is the highest honor in IOCG given triennially. Recently, he also received TECO award for his achievement in silicon materials.